All MOSFET. FDAF59N30 Datasheet

 

FDAF59N30 Datasheet and Replacement


   Type Designator: FDAF59N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 161 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 575 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TO-3PF
 

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FDAF59N30 Datasheet (PDF)

 ..1. Size:762K  fairchild semi
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FDAF59N30

October 2006TMUniFETFDAF59N30300V N-Channel MOSFETFeatures Description 34A, 300V, RDS(on) = 0.056 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially tailored

Datasheet: FCU2250N80Z , FCU3400N80Z , FCU7N60TU , FDA16N50 , FDA2712 , FDA62N28 , FDA75N28 , FDA79N15 , IRFB3607 , FDAF62N28 , FDAF69N25 , FDAF75N28 , FDB14AN06LA0 , FDB20AN06A0 , FDB24AN06LA0 , FDB2570 , FDB2670 .

History: 12N90

Keywords - FDAF59N30 MOSFET datasheet

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