FDAF59N30 Specs and Replacement

Type Designator: FDAF59N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 161 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 575 nS

Cossⓘ - Output Capacitance: 710 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: TO-3PF

FDAF59N30 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDAF59N30 datasheet

 ..1. Size:762K  fairchild semi
 fdaf59n30.pdf pdf_icon

FDAF59N30

October 2006 TM UniFET FDAF59N30 300V N-Channel MOSFET Features Description 34A, 300V, RDS(on) = 0.056 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 77 nC) DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored... See More ⇒

Detailed specifications: FCU2250N80Z, FCU3400N80Z, FCU7N60TU, FDA16N50, FDA2712, FDA62N28, FDA75N28, FDA79N15, K4145, FDAF62N28, FDAF69N25, FDAF75N28, FDB14AN06LA0, FDB20AN06A0, FDB24AN06LA0, FDB2570, FDB2670

Keywords - FDAF59N30 MOSFET specs

 FDAF59N30 cross reference

 FDAF59N30 equivalent finder

 FDAF59N30 pdf lookup

 FDAF59N30 substitution

 FDAF59N30 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility