All MOSFET. FDAF62N28 Datasheet

 

FDAF62N28 Datasheet and Replacement


   Type Designator: FDAF62N28
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 280 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 560 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: TO-3PF
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FDAF62N28 Datasheet (PDF)

 ..1. Size:719K  fairchild semi
 fdaf62n28.pdf pdf_icon

FDAF62N28

October 2006TMUniFETFDAF62N28280V N-Channel MOSFETFeatures Description 36A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 83 pF)This advanced technology has been especially tailored

 9.1. Size:628K  fairchild semi
 fdaf69n25.pdf pdf_icon

FDAF62N28

September 2005TMUniFETFDAF69N25 250V N-Channel MOSFETFeatures Description 34A, 250V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 84 pF)This advanced technology has been especially tailo

Datasheet: FCU3400N80Z , FCU7N60TU , FDA16N50 , FDA2712 , FDA62N28 , FDA75N28 , FDA79N15 , FDAF59N30 , AON7506 , FDAF69N25 , FDAF75N28 , FDB14AN06LA0 , FDB20AN06A0 , FDB24AN06LA0 , FDB2570 , FDB2670 , FDB3672 .

History: IPB034N06N3G | BLS70R180-A | APT10M19BVFRG | NTP30N06 | FHF15N65A | SE1003 | NCE40P06J

Keywords - FDAF62N28 MOSFET datasheet

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