All MOSFET. FDAF69N25 Datasheet

 

FDAF69N25 Datasheet and Replacement


   Type Designator: FDAF69N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 855 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-3PF
 

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FDAF69N25 Datasheet (PDF)

 ..1. Size:628K  fairchild semi
 fdaf69n25.pdf pdf_icon

FDAF69N25

September 2005TMUniFETFDAF69N25 250V N-Channel MOSFETFeatures Description 34A, 250V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 84 pF)This advanced technology has been especially tailo

 9.1. Size:719K  fairchild semi
 fdaf62n28.pdf pdf_icon

FDAF69N25

October 2006TMUniFETFDAF62N28280V N-Channel MOSFETFeatures Description 36A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 83 pF)This advanced technology has been especially tailored

Datasheet: FCU7N60TU , FDA16N50 , FDA2712 , FDA62N28 , FDA75N28 , FDA79N15 , FDAF59N30 , FDAF62N28 , RFP50N06 , FDAF75N28 , FDB14AN06LA0 , FDB20AN06A0 , FDB24AN06LA0 , FDB2570 , FDB2670 , FDB3672 , FDB42AN15A0 .

History: STP25N80K5 | IRLR3105PBF | JCS9N50FT | HSM4435

Keywords - FDAF69N25 MOSFET datasheet

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