FDAF69N25 Specs and Replacement

Type Designator: FDAF69N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 855 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO-3PF

FDAF69N25 substitution

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FDAF69N25 datasheet

 ..1. Size:628K  fairchild semi
 fdaf69n25.pdf pdf_icon

FDAF69N25

September 2005 TM UniFET FDAF69N25 250V N-Channel MOSFET Features Description 34A, 250V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 77 nC) DMOS technology. Low Crss ( typical 84 pF) This advanced technology has been especially tailo... See More ⇒

 9.1. Size:719K  fairchild semi
 fdaf62n28.pdf pdf_icon

FDAF69N25

October 2006 TM UniFET FDAF62N28 280V N-Channel MOSFET Features Description 36A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 77 nC) DMOS technology. Low Crss ( typical 83 pF) This advanced technology has been especially tailored... See More ⇒

Detailed specifications: FCU7N60TU, FDA16N50, FDA2712, FDA62N28, FDA75N28, FDA79N15, FDAF59N30, FDAF62N28, AON7410, FDAF75N28, FDB14AN06LA0, FDB20AN06A0, FDB24AN06LA0, FDB2570, FDB2670, FDB3672, FDB42AN15A0

Keywords - FDAF69N25 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.