All MOSFET. FDAF75N28 Datasheet

 

FDAF75N28 Datasheet and Replacement


   Type Designator: FDAF75N28
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 280 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 580 nS
   Cossⓘ - Output Capacitance: 915 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-3PF
 

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FDAF75N28 Datasheet (PDF)

 ..1. Size:724K  fairchild semi
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FDAF75N28

October 2006TMUniFETFDAF75N28 280V N-Channel MOSFETFeatures Description 46A, 280V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 111 nC)stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been especially tailored

Datasheet: FDA16N50 , FDA2712 , FDA62N28 , FDA75N28 , FDA79N15 , FDAF59N30 , FDAF62N28 , FDAF69N25 , 4N60 , FDB14AN06LA0 , FDB20AN06A0 , FDB24AN06LA0 , FDB2570 , FDB2670 , FDB3672 , FDB42AN15A0 , FDB44N25TM .

History: AP3R303GMT | IRF842

Keywords - FDAF75N28 MOSFET datasheet

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