All MOSFET. FDB42AN15A0 Datasheet

 

FDB42AN15A0 Datasheet and Replacement


   Type Designator: FDB42AN15A0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-263AB
 

 FDB42AN15A0 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDB42AN15A0 Datasheet (PDF)

 ..1. Size:255K  fairchild semi
 fdb42an15a0.pdf pdf_icon

FDB42AN15A0

September 2002FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench MOSFET150V, 35A, 42mFeatures Applications rDS(ON) = 36m (Typ.), VGS = 10V, ID = 12A DC/DC Converters and Off-line UPS Qg(tot) = 33nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Sy

 ..2. Size:258K  fairchild semi
 fdp42an15a0 fdb42an15a0.pdf pdf_icon

FDB42AN15A0

September 2002FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench MOSFET150V, 35A, 42mFeatures Applications rDS(ON) = 36m (Typ.), VGS = 10V, ID = 12A DC/DC Converters and Off-line UPS Qg(tot) = 33nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Sy

 ..3. Size:277K  inchange semiconductor
 fdb42an15a0.pdf pdf_icon

FDB42AN15A0

isc N-Channel MOSFET Transistor FDB42AN15A0FEATURESWith TO-263 packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 42m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 5.1. Size:344K  fairchild semi
 fdb42an15 f085.pdf pdf_icon

FDB42AN15A0

June 2013FDB42AN15A0_F085N-Channel Power Trench MOSFET150V, 35A, 42mDDFeatures Typ rDS(on) = 30m at VGS = 10V, ID = 12A Typ Qg(tot) = 78nC at VGS = 10V, ID = 12AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SApplications FDB SERIES Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alt

SHOW MORE

Datasheet: FDAF69N25 , FDAF75N28 , FDB14AN06LA0 , FDB20AN06A0 , FDB24AN06LA0 , FDB2570 , FDB2670 , FDB3672 , IRFP450 , FDB44N25TM , FDB52N20TM , FDB5645 , FDB5800F085 , FDB6021P , FDB6670AS , FDB6690S , FDB7030LL86Z .

Keywords - FDB42AN15A0 MOSFET datasheet

 FDB42AN15A0 cross reference
 FDB42AN15A0 equivalent finder
 FDB42AN15A0 lookup
 FDB42AN15A0 substitution
 FDB42AN15A0 replacement

 

 
Back to Top

 


 
.