All MOSFET. FDB52N20TM Datasheet

 

FDB52N20TM Datasheet and Replacement


   Type Designator: FDB52N20TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 175 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: D2-PAK
 

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FDB52N20TM Datasheet (PDF)

 ..1. Size:937K  fairchild semi
 fdb52n20 fdb52n20tm.pdf pdf_icon

FDB52N20TM

July 2008UniFETTMFDB52N20200V N-Channel MOSFETFeatures Description 52A, 200V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 49 nC)DMOS technology. Low Crss ( typical 66 pF)This advanced technology has been especially tailored to m

 6.1. Size:525K  onsemi
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FDB52N20TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDB14AN06LA0 , FDB20AN06A0 , FDB24AN06LA0 , FDB2570 , FDB2670 , FDB3672 , FDB42AN15A0 , FDB44N25TM , 20N50 , FDB5645 , FDB5800F085 , FDB6021P , FDB6670AS , FDB6690S , FDB7030LL86Z , FDB8132 , FDB8160 .

History: WMJ80N65F2 | SMY60

Keywords - FDB52N20TM MOSFET datasheet

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