FDB52N20TM Specs and Replacement

Type Designator: FDB52N20TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 175 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm

Package: D2-PAK

FDB52N20TM substitution

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FDB52N20TM datasheet

 ..1. Size:937K  fairchild semi
 fdb52n20 fdb52n20tm.pdf pdf_icon

FDB52N20TM

July 2008 UniFETTM FDB52N20 200V N-Channel MOSFET Features Description 52A, 200V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 49 nC) DMOS technology. Low Crss ( typical 66 pF) This advanced technology has been especially tailored to m... See More ⇒

 6.1. Size:525K  onsemi
 fdb52n20.pdf pdf_icon

FDB52N20TM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDB14AN06LA0, FDB20AN06A0, FDB24AN06LA0, FDB2570, FDB2670, FDB3672, FDB42AN15A0, FDB44N25TM, STP80NF70, FDB5645, FDB5800F085, FDB6021P, FDB6670AS, FDB6690S, FDB7030LL86Z, FDB8132, FDB8160

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