FDB5645 Datasheet and Replacement
Type Designator: FDB5645
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 810 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO-263AB
FDB5645 substitution
FDB5645 Datasheet (PDF)
fdb5645 fdp5645.pdf

March 2000FDP5645/FDB564560V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 80 A, 60 V. RDS(ON) = 0.0095 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.011 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Critical DC electrical parameters
fdp5680 fdb5680.pdf

July 2000FDP5680/FDB568060V N-Channel PowerTrenchTM MOSFETGeneral Description Features 40 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 VThis N-Channel MOSFET has been designed specifically RDS(ON) = 0.023 @ VGS = 6 V.to improve the overall efficiency of DC/DC convertersusing either synchronous or conventional switching PWM Critical DC electrical parameters specified at ev
fdp5690 fdb5690.pdf

July 2000FDP5690/FDB569060V N-Channel PowerTrenchTM MOSFETGeneral Description Features 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 VThis N-Channel MOSFET has been designed specifically RDS(ON) = 0.032 @ VGS = 6 V.to improve the overall efficiency of DC/DC convertersusing either synchronous or conventional switching PWM Critical DC electrical parameters specified at ev
Datasheet: FDB20AN06A0 , FDB24AN06LA0 , FDB2570 , FDB2670 , FDB3672 , FDB42AN15A0 , FDB44N25TM , FDB52N20TM , IRF1407 , FDB5800F085 , FDB6021P , FDB6670AS , FDB6690S , FDB7030LL86Z , FDB8132 , FDB8160 , FDB8444TS .
Keywords - FDB5645 MOSFET datasheet
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