FDB6670AS Specs and Replacement
Type Designator: FDB6670AS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 62 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-263AB
FDB6670AS substitution
- MOSFET ⓘ Cross-Reference Search
FDB6670AS datasheet
fdb6670as.pdf
May 2008 FDP6670AS/FDB6670AS tm 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET 31 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V and parallel Schottky diode in synchronous DC DC RDS(ON) = 10.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a... See More ⇒
fdp6670al fdb6670al.pdf
May 2003 FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 80 A, 30 V RDS(ON) = 6.5 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 8.5 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC elect... See More ⇒
fdb6690s.pdf
SEPTEMBER 2001 FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET 21 A, 30 V. RDS(ON) = 15.5 m @ VGS = 10 V and parallel Schottky diode in synchronous DC DC RDS(ON) = 23.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing ... See More ⇒
Detailed specifications: FDB2670, FDB3672, FDB42AN15A0, FDB44N25TM, FDB52N20TM, FDB5645, FDB5800F085, FDB6021P, BS170, FDB6690S, FDB7030LL86Z, FDB8132, FDB8160, FDB8444TS, FDB86563F085, FDB8874, FDB8876
Keywords - FDB6670AS MOSFET specs
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