FDC796N Datasheet and Replacement
Type Designator: FDC796N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 342 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SSOT-6
FDC796N substitution
FDC796N Datasheet (PDF)
fdc796n.pdf
February 2004 FDC796N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.5 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High
fdc796n fdc796n f077.pdf
February 2004 FDC796N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.5 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High
Datasheet: FDC602PF095 , FDC633NF095 , FDC640PF095 , FDC645NF095 , FDC697P , FDC697PF077 , FDC699P , FDC699PF077 , EMB04N03H , FDC796NF077 , FDD044AN03L , FDD068AN03L , FDD107AN06LA0 , FDD10N20LZTM , FDD14AN06LA0 , FDD16AN08A0NF054 , FDD20AN06A0 .
History: TPCA8A09-H | AP4435GJ | SQJ465EP | NP40N055NHE | CEH2310 | VBZE40N10 | RSH070P05TB1
Keywords - FDC796N MOSFET datasheet
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FDC796N replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: TPCA8A09-H | AP4435GJ | SQJ465EP | NP40N055NHE | CEH2310 | VBZE40N10 | RSH070P05TB1
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