All MOSFET. FDFC2P100 Datasheet

 

FDFC2P100 Datasheet and Replacement


   Type Designator: FDFC2P100
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SSOT-6
 

 FDFC2P100 substitution

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FDFC2P100 Datasheet (PDF)

 ..1. Size:315K  fairchild semi
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FDFC2P100

October 2006FDFC2P100Integrated P-Channel PowerTrench MOSFET and Schottky Diode-20V, -3A, 150mFeatures General Description Max rDS(on) = 150m at VGS = -4.5V, ID = -3.0AThe FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 200m at VGS = -2.5V, ID = -2.2Aforward voltage drop Schottky barrier recti

Datasheet: FDD7N25LZTM , FDD7N60NZTM , FDD8580 , FDD8586 , FDD86367F085 , FDD86369F085 , FDD8750 , FDD9411F085 , 12N60 , FDFC3N108 , FDFM2N111 , FDFM2P110 , FDFMA2N028Z , FDFMA2P029Z , FDFMA2P853 , FDFMA2P853T , FDFMA2P857 .

History: IXFT50N60P3 | BRCS045N08SHRA

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