All MOSFET. FDFC2P100 Datasheet

 

FDFC2P100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDFC2P100
   Marking Code: ..100
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SSOT-6

 FDFC2P100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDFC2P100 Datasheet (PDF)

 ..1. Size:315K  fairchild semi
 fdfc2p100.pdf

FDFC2P100 FDFC2P100

October 2006FDFC2P100Integrated P-Channel PowerTrench MOSFET and Schottky Diode-20V, -3A, 150mFeatures General Description Max rDS(on) = 150m at VGS = -4.5V, ID = -3.0AThe FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 200m at VGS = -2.5V, ID = -2.2Aforward voltage drop Schottky barrier recti

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUK9618-30 | IXTK160N20

 

 
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