FDFC2P100 Specs and Replacement

Type Designator: FDFC2P100

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SSOT-6

FDFC2P100 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDFC2P100 datasheet

 ..1. Size:315K  fairchild semi
 fdfc2p100.pdf pdf_icon

FDFC2P100

October 2006 FDFC2P100 Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150m Features General Description Max rDS(on) = 150m at VGS = -4.5V, ID = -3.0A The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 200m at VGS = -2.5V, ID = -2.2A forward voltage drop Schottky barrier recti... See More ⇒

Detailed specifications: FDD7N25LZTM, FDD7N60NZTM, FDD8580, FDD8586, FDD86367F085, FDD86369F085, FDD8750, FDD9411F085, K3569, FDFC3N108, FDFM2N111, FDFM2P110, FDFMA2N028Z, FDFMA2P029Z, FDFMA2P853, FDFMA2P853T, FDFMA2P857

Keywords - FDFC2P100 MOSFET specs

 FDFC2P100 cross reference

 FDFC2P100 equivalent finder

 FDFC2P100 pdf lookup

 FDFC2P100 substitution

 FDFC2P100 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs