FDFC3N108 Specs and Replacement

Type Designator: FDFC3N108

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SSOT-6

FDFC3N108 substitution

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FDFC3N108 datasheet

 ..1. Size:108K  fairchild semi
 fdfc3n108.pdf pdf_icon

FDFC3N108

January 2004 FDFC3N108 N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode General Description Features This N-Channel 1.8V specified MOSFET uses 3 A, 20 V RDS(ON) = 70 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 95 m @ VGS = 2.5 V It is combined with a low forward drop Schottky that is isolated from the MOSFET, pro... See More ⇒

Detailed specifications: FDD7N60NZTM, FDD8580, FDD8586, FDD86367F085, FDD86369F085, FDD8750, FDD9411F085, FDFC2P100, IRFP260, FDFM2N111, FDFM2P110, FDFMA2N028Z, FDFMA2P029Z, FDFMA2P853, FDFMA2P853T, FDFMA2P857, FDFMA2P859T

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