All MOSFET. FDFC3N108 Datasheet

 

FDFC3N108 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDFC3N108
   Marking Code: ..108
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.9 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SSOT-6

 FDFC3N108 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDFC3N108 Datasheet (PDF)

 ..1. Size:108K  fairchild semi
 fdfc3n108.pdf

FDFC3N108 FDFC3N108

January 2004 FDFC3N108 N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode General Description Features This N-Channel 1.8V specified MOSFET uses 3 A, 20 V RDS(ON) = 70 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 95 m @ VGS = 2.5 V It is combined with a low forward drop Schottky that is isolated from the MOSFET, pro

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