All MOSFET. FDFC3N108 Datasheet

 

FDFC3N108 Datasheet and Replacement


   Type Designator: FDFC3N108
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SSOT-6
 

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FDFC3N108 Datasheet (PDF)

 ..1. Size:108K  fairchild semi
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FDFC3N108

January 2004 FDFC3N108 N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode General Description Features This N-Channel 1.8V specified MOSFET uses 3 A, 20 V RDS(ON) = 70 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 95 m @ VGS = 2.5 V It is combined with a low forward drop Schottky that is isolated from the MOSFET, pro

Datasheet: FDD7N60NZTM , FDD8580 , FDD8586 , FDD86367F085 , FDD86369F085 , FDD8750 , FDD9411F085 , FDFC2P100 , 8205A , FDFM2N111 , FDFM2P110 , FDFMA2N028Z , FDFMA2P029Z , FDFMA2P853 , FDFMA2P853T , FDFMA2P857 , FDFMA2P859T .

History: SM6008NF | HAT2174N | 2SK1813

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