FDFME2P823ZT Specs and Replacement

Type Designator: FDFME2P823ZT

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm

Package: MICROFET1.6X1.6THIN

FDFME2P823ZT substitution

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FDFME2P823ZT datasheet

 ..1. Size:262K  fairchild semi
 fdfme2p823zt.pdf pdf_icon

FDFME2P823ZT

July 2010 FDFME2P823ZT Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20 V, -2.6 A, 142 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 142 m at VGS = -4.5 V, ID = -2.3 A for the battery charge switch in cellular handset and other Max rDS(on) = 213 m at VGS = -2.5 V, ID = -1.8 A ultra-portable appl... See More ⇒

 9.1. Size:268K  fairchild semi
 fdfme3n311zt.pdf pdf_icon

FDFME2P823ZT

July 2010 FDFME3N311ZT Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30 V, 1.8 A, 299 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 299 m at VGS = 4.5 V, ID = 1.6 A for a boost topology in cellular handset and other ultra-portable Max rDS(on) = 410 m at VGS = 2.5 V, ID = 1.3 A applications. It fe... See More ⇒

Detailed specifications: FDFM2P110, FDFMA2N028Z, FDFMA2P029Z, FDFMA2P853, FDFMA2P853T, FDFMA2P857, FDFMA2P859T, FDFMA3N109, IRFB3607, FDFME3N311ZT, FDFMJ2P023Z, FDFS2P102, FDFS2P102A, FDFS2P103, FDFS2P103A, FDFS2P106A, FDFS2P753AZ

Keywords - FDFME2P823ZT MOSFET specs

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