All MOSFET. FDFME3N311ZT Datasheet

 

FDFME3N311ZT Datasheet and Replacement


   Type Designator: FDFME3N311ZT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
   Package: MICROFET1.6X1.6THIN
 

 FDFME3N311ZT substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDFME3N311ZT Datasheet (PDF)

 ..1. Size:268K  fairchild semi
 fdfme3n311zt.pdf pdf_icon

FDFME3N311ZT

July 2010FDFME3N311ZTIntegrated N-Channel PowerTrench MOSFET and Schottky Diode 30 V, 1.8 A, 299 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 299 m at VGS = 4.5 V, ID = 1.6 Afor a boost topology in cellular handset and other ultra-portable Max rDS(on) = 410 m at VGS = 2.5 V, ID = 1.3 Aapplications. It fe

 9.1. Size:262K  fairchild semi
 fdfme2p823zt.pdf pdf_icon

FDFME3N311ZT

July 2010FDFME2P823ZTIntegrated P-Channel PowerTrench MOSFET and Schottky Diode -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 142 m at VGS = -4.5 V, ID = -2.3 Afor the battery charge switch in cellular handset and other Max rDS(on) = 213 m at VGS = -2.5 V, ID = -1.8 Aultra-portable appl

Datasheet: FDFMA2N028Z , FDFMA2P029Z , FDFMA2P853 , FDFMA2P853T , FDFMA2P857 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , AON6380 , FDFMJ2P023Z , FDFS2P102 , FDFS2P102A , FDFS2P103 , FDFS2P103A , FDFS2P106A , FDFS2P753AZ , FDFS2P753Z .

Keywords - FDFME3N311ZT MOSFET datasheet

 FDFME3N311ZT cross reference
 FDFME3N311ZT equivalent finder
 FDFME3N311ZT lookup
 FDFME3N311ZT substitution
 FDFME3N311ZT replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.