FDFME3N311ZT Datasheet and Replacement. Cross Reference Search

FDFME3N311ZT Datasheet (PDF)

..1. Size:268K fairchild semi
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July 2010FDFME3N311ZTIntegrated N-Channel PowerTrench MOSFET and Schottky Diode 30 V, 1.8 A, 299 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 299 m at VGS = 4.5 V, ID = 1.6 Afor a boost topology in cellular handset and other ultra-portable Max rDS(on) = 410 m at VGS = 2.5 V, ID = 1.3 Aapplications. It fe

9.1. Size:262K fairchild semi
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July 2010FDFME2P823ZTIntegrated P-Channel PowerTrench MOSFET and Schottky Diode -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 142 m at VGS = -4.5 V, ID = -2.3 Afor the battery charge switch in cellular handset and other Max rDS(on) = 213 m at VGS = -2.5 V, ID = -1.8 Aultra-portable appl

Datasheet: FDFMA2N028Z , FDFMA2P029Z , FDFMA2P853 , FDFMA2P853T , FDFMA2P857 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , IRLZ44N , FDFMJ2P023Z , FDFS2P102 , FDFS2P102A , FDFS2P103 , FDFS2P103A , FDFS2P106A , FDFS2P753AZ , FDFS2P753Z .