All MOSFET. FDFMJ2P023Z Datasheet

 

FDFMJ2P023Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDFMJ2P023Z
   Marking Code: .P23
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.6 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
   Package: SC-75MICROFET

 FDFMJ2P023Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDFMJ2P023Z Datasheet (PDF)

 ..1. Size:292K  fairchild semi
 fdfmj2p023z.pdf

FDFMJ2P023Z FDFMJ2P023Z

August 2007FDFMJ2P023ZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 2.9A, 112mFeatures General DescriptionMOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other Max rDS(on) = 112m at VGS = 4.5V, ID = 2.9Aultra-portable applications. It features a MOSFET with l

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RUH3025M3 | SI7448DP | STK20N75F3 | STM4439A | IXTH30N60L2

 

 
Back to Top