All MOSFET. FDFMJ2P023Z Datasheet

 

FDFMJ2P023Z Datasheet and Replacement


   Type Designator: FDFMJ2P023Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
   Package: SC-75MICROFET
 

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FDFMJ2P023Z Datasheet (PDF)

 ..1. Size:292K  fairchild semi
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FDFMJ2P023Z

August 2007FDFMJ2P023ZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 2.9A, 112mFeatures General DescriptionMOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other Max rDS(on) = 112m at VGS = 4.5V, ID = 2.9Aultra-portable applications. It features a MOSFET with l

Datasheet: FDFMA2P029Z , FDFMA2P853 , FDFMA2P853T , FDFMA2P857 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , FDFME3N311ZT , AO4407 , FDFS2P102 , FDFS2P102A , FDFS2P103 , FDFS2P103A , FDFS2P106A , FDFS2P753AZ , FDFS2P753Z , FDFS6N303 .

History: SE8090A | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | KI2303BDS | SM140R50CT1TL

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