FDFMJ2P023Z Specs and Replacement

Type Designator: FDFMJ2P023Z

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm

Package: SC-75MICROFET

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FDFMJ2P023Z datasheet

 ..1. Size:292K  fairchild semi
 fdfmj2p023z.pdf pdf_icon

FDFMJ2P023Z

August 2007 FDFMJ2P023Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 2.9A, 112m Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other Max rDS(on) = 112m at VGS = 4.5V, ID = 2.9A ultra-portable applications. It features a MOSFET with l... See More ⇒

Detailed specifications: FDFMA2P029Z, FDFMA2P853, FDFMA2P853T, FDFMA2P857, FDFMA2P859T, FDFMA3N109, FDFME2P823ZT, FDFME3N311ZT, IRF530, FDFS2P102, FDFS2P102A, FDFS2P103, FDFS2P103A, FDFS2P106A, FDFS2P753AZ, FDFS2P753Z, FDFS6N303

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