All MOSFET. FDG361N Datasheet

 

FDG361N Datasheet and Replacement


   Type Designator: FDG361N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SC70-6
 

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FDG361N Datasheet (PDF)

 ..1. Size:78K  fairchild semi
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FDG361N

August 2001FDG361NN-Channel 100V Specified PowerTrenchMOSFETFeaturesGeneral DescriptionThese N-Channel 100V specified MOSFETs are 0.6 A, 100 V. RDS(ON)= 500 m @ VGS = 10 Vproduced using Fairchild Semiconductor's advancedRDS(ON)= 550 m @ VGS = 6.0 VPowerTrench process that has been especially tailoredto minimize on-state resistance and yet maintain low Low gat

Datasheet: FDFS2P106A , FDFS2P753AZ , FDFS2P753Z , FDFS6N303 , FDFS6N548 , FDFS6N754 , FDG313ND87Z , FDG329N , 75N75 , FDH15N50 , FDH27N50 , FDH50N50F133 , FDH5500 , FDI025N06 , FDI047AN08A0 , FDI2532 , FDI33N25 .

History: IXFH88N30P | NCE65NF023T | IXTH4N100L | ME2312 | NCE65N330K | AUIRFSL4115 | AP9960GH

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