FDG361N Specs and Replacement

Type Designator: FDG361N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SC70-6

FDG361N substitution

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FDG361N datasheet

 ..1. Size:78K  fairchild semi
 fdg361n.pdf pdf_icon

FDG361N

August 2001 FDG361N N-Channel 100V Specified PowerTrench MOSFET Features General Description These N-Channel 100V specified MOSFETs are 0.6 A, 100 V. RDS(ON)= 500 m @ VGS = 10 V produced using Fairchild Semiconductor's advanced RDS(ON)= 550 m @ VGS = 6.0 V PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low Low gat... See More ⇒

Detailed specifications: FDFS2P106A, FDFS2P753AZ, FDFS2P753Z, FDFS6N303, FDFS6N548, FDFS6N754, FDG313ND87Z, FDG329N, 10N65, FDH15N50, FDH27N50, FDH50N50F133, FDH5500, FDI025N06, FDI047AN08A0, FDI2532, FDI33N25

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.