All MOSFET. FDH27N50 Datasheet

 

FDH27N50 Datasheet and Replacement


   Type Designator: FDH27N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 409 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-247
 

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FDH27N50 Datasheet (PDF)

 ..1. Size:180K  fairchild semi
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FDH27N50

August 2002FDH27N5027A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple Drive Require-Switch Mode Power Supplies(SMPS), such as ment PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON) Flyback Converte

 ..2. Size:300K  inchange semiconductor
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FDH27N50

isc N-Channel MOSFET Transistor FDH27N50FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: FDFS2P753Z , FDFS6N303 , FDFS6N548 , FDFS6N754 , FDG313ND87Z , FDG329N , FDG361N , FDH15N50 , SKD502T , FDH50N50F133 , FDH5500 , FDI025N06 , FDI047AN08A0 , FDI2532 , FDI33N25 , FDI3652 , FDI8442 .

History: AD50N06S | JMSH0805PC | AP2313GN | KP751V1 | AP2320GN-HF | RU2568L | HGN110N08AL

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