FDH27N50 Datasheet and Replacement
Type Designator: FDH27N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 409 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-247
FDH27N50 substitution
FDH27N50 Datasheet (PDF)
fdh27n50.pdf
August 2002FDH27N5027A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple Drive Require-Switch Mode Power Supplies(SMPS), such as ment PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON) Flyback Converte
fdh27n50.pdf
isc N-Channel MOSFET Transistor FDH27N50FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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