FDH27N50 Specs and Replacement

Type Designator: FDH27N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 450 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 409 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO-247

FDH27N50 substitution

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FDH27N50 datasheet

 ..1. Size:180K  fairchild semi
 fdh27n50.pdf pdf_icon

FDH27N50

August 2002 FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Require- Switch Mode Power Supplies(SMPS), such as ment PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyback Converte... See More ⇒

 ..2. Size:300K  inchange semiconductor
 fdh27n50.pdf pdf_icon

FDH27N50

isc N-Channel MOSFET Transistor FDH27N50 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

Detailed specifications: FDFS2P753Z, FDFS6N303, FDFS6N548, FDFS6N754, FDG313ND87Z, FDG329N, FDG361N, FDH15N50, RFP50N06, FDH50N50F133, FDH5500, FDI025N06, FDI047AN08A0, FDI2532, FDI33N25, FDI3652, FDI8442

Keywords - FDH27N50 MOSFET specs

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