All MOSFET. FDI025N06 Datasheet

 

FDI025N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDI025N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 395 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 265 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 226 nC
   trⓘ - Rise Time: 324 nS
   Cossⓘ - Output Capacitance: 1610 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-262

 FDI025N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDI025N06 Datasheet (PDF)

 ..1. Size:543K  fairchild semi
 fdi025n06.pdf

FDI025N06 FDI025N06

June 2008FDI025N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.5mFeatures General Description RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 ..2. Size:255K  inchange semiconductor
 fdi025n06.pdf

FDI025N06 FDI025N06

isc N-Channel MOSFET Transistor FDI025N06FEATURESDrain Current I = 265A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTD5P06V

 

 
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