All MOSFET. FDI025N06 Datasheet

 

FDI025N06 Datasheet and Replacement


   Type Designator: FDI025N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 395 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 265 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 324 nS
   Cossⓘ - Output Capacitance: 1610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-262
 

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FDI025N06 Datasheet (PDF)

 ..1. Size:543K  fairchild semi
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FDI025N06

June 2008FDI025N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.5mFeatures General Description RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 ..2. Size:255K  inchange semiconductor
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FDI025N06

isc N-Channel MOSFET Transistor FDI025N06FEATURESDrain Current I = 265A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: FDFS6N754 , FDG313ND87Z , FDG329N , FDG361N , FDH15N50 , FDH27N50 , FDH50N50F133 , FDH5500 , 75N75 , FDI047AN08A0 , FDI2532 , FDI33N25 , FDI3652 , FDI8442 , FDJ127P , FDJ128N , FDJ128NF077 .

History: APT4080BN | 25N10G-TM3-T

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