FDI025N06 Specs and Replacement

Type Designator: FDI025N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 395 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 265 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 324 nS

Cossⓘ - Output Capacitance: 1610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO-262

FDI025N06 substitution

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FDI025N06 datasheet

 ..1. Size:543K  fairchild semi
 fdi025n06.pdf pdf_icon

FDI025N06

June 2008 FDI025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5m Features General Description RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p... See More ⇒

 ..2. Size:255K  inchange semiconductor
 fdi025n06.pdf pdf_icon

FDI025N06

isc N-Channel MOSFET Transistor FDI025N06 FEATURES Drain Current I = 265A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 2.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

Detailed specifications: FDFS6N754, FDG313ND87Z, FDG329N, FDG361N, FDH15N50, FDH27N50, FDH50N50F133, FDH5500, 18N50, FDI047AN08A0, FDI2532, FDI33N25, FDI3652, FDI8442, FDJ127P, FDJ128N, FDJ128NF077

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.