All MOSFET. FDI2532 Datasheet

 

FDI2532 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDI2532

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 79 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 107 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 615 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO-262AB

FDI2532 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDI2532 Datasheet (PDF)

1.1. fdi2532.pdf Size:272K _upd-mosfet

FDI2532
FDI2532

August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features Applications • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage S

1.2. fdb2532 fdp2532 fdi2532.pdf Size:275K _fairchild_semi

FDI2532
FDI2532

August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16m? Features Applications rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top