FDI2532 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDI2532
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 310 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 79 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 107 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 615 pF
Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm
Package: TO-262AB
FDI2532 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDI2532 Datasheet (PDF)
1.1. fdi2532.pdf 
Size:272K _upd-mosfet
August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features Applications • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage S
1.2. fdb2532 fdp2532 fdi2532.pdf Size:275K _fairchild_semi
August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16m? Features Applications rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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