FDM100-0045SP Specs and Replacement

Type Designator: FDM100-0045SP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: ISOPLUS-I4-PAC

FDM100-0045SP substitution

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FDM100-0045SP datasheet

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FDM100-0045SP

FDM 100-0045SP ID25 = 100 A Buck Chopper VDSS = 55 V with Trench Power MOSFET RDSon typ. = 5.7 m and Schottky Diode in ISOPLUS i4-PACTM 3 Preliminary data 5 4 1 2 5 Features MOSFET trench MOSFET Symbol Conditions Maximum Ratings - very low on state resistance RDSon - fast switching VDSS TVJ = 25 C to 150 C 55 V Schottky diode - low forward... See More ⇒

Detailed specifications: FDI2532, FDI33N25, FDI3652, FDI8442, FDJ127P, FDJ128N, FDJ128NF077, FDJ129P, AO3400A, FDM21-05QC, FDM606P, FDM6296, FDMA1430JP, FDMA6676PZ, FDMA86108LZ, FDMA86251, FDMB506P

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