All MOSFET. FDM100-0045SP Datasheet

 

FDM100-0045SP Datasheet and Replacement


   Type Designator: FDM100-0045SP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 115 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: ISOPLUS-I4-PAC
 

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FDM100-0045SP Datasheet (PDF)

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FDM100-0045SP

FDM 100-0045SPID25 = 100 ABuck ChopperVDSS = 55 Vwith Trench Power MOSFETRDSon typ. = 5.7 mand Schottky Diodein ISOPLUS i4-PACTM3Preliminary data54125Features MOSFET trench MOSFETSymbol Conditions Maximum Ratings - very low on state resistance RDSon- fast switchingVDSS TVJ = 25C to 150C 55 V Schottky diode- low forward

Datasheet: FDI2532 , FDI33N25 , FDI3652 , FDI8442 , FDJ127P , FDJ128N , FDJ128NF077 , FDJ129P , RU6888R , FDM21-05QC , FDM606P , FDM6296 , FDMA1430JP , FDMA6676PZ , FDMA86108LZ , FDMA86251 , FDMB506P .

History: SI4622DY | VBZL80N03

Keywords - FDM100-0045SP MOSFET datasheet

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