All MOSFET. FDM606P Datasheet

 

FDM606P MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDM606P
   Marking Code: .06P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: MICROFET3X2-8

 FDM606P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDM606P Datasheet (PDF)

 ..1. Size:322K  fairchild semi
 fdm606p.pdf

FDM606P FDM606P

December 2004FDM606P P-Channel 1.8V Logic Level Power Trench MOSFETGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Fast switchingSemiconductors advanced PowerTrench process that has rDS(ON) = 0.026 (Typ), VGS = -4.5Vbeen especially tailored to minimize the on-state resistanceand yet maintain low gate charge for superior switching

 9.1. Size:4926K  first semi
 fdm60r65an4g.pdf

FDM606P FDM606P

FDM60R65AN4GProduct Summary V = 650 VDSID@25oC = 51A R = 59mDS(ON) TO-247-4Features Benefits High Blocking Voltage Higher System Efficiency High Frequency Operation Parallel Device Convenience without thermal runaway Low on-resistance High Temperature Application Fast intrinsic diode with low reverse recovery Hard Switching & H

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: HUFA75829D3ST | IXTH42N20 | IRF530NLPBF

 

 
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