All MOSFET. FDM606P Datasheet

 

FDM606P Datasheet and Replacement


   Type Designator: FDM606P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: MICROFET3X2-8
 

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FDM606P Datasheet (PDF)

 ..1. Size:322K  fairchild semi
 fdm606p.pdf pdf_icon

FDM606P

December 2004FDM606P P-Channel 1.8V Logic Level Power Trench MOSFETGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Fast switchingSemiconductors advanced PowerTrench process that has rDS(ON) = 0.026 (Typ), VGS = -4.5Vbeen especially tailored to minimize the on-state resistanceand yet maintain low gate charge for superior switching

 9.1. Size:4926K  first semi
 fdm60r65an4g.pdf pdf_icon

FDM606P

FDM60R65AN4GProduct Summary V = 650 VDSID@25oC = 51A R = 59mDS(ON) TO-247-4Features Benefits High Blocking Voltage Higher System Efficiency High Frequency Operation Parallel Device Convenience without thermal runaway Low on-resistance High Temperature Application Fast intrinsic diode with low reverse recovery Hard Switching & H

Datasheet: FDI3652 , FDI8442 , FDJ127P , FDJ128N , FDJ128NF077 , FDJ129P , FDM100-0045SP , FDM21-05QC , IRFZ48N , FDM6296 , FDMA1430JP , FDMA6676PZ , FDMA86108LZ , FDMA86251 , FDMB506P , FDMC6688P , FDMC8010ET30 .

History: IRFS440B | SIHFP32N50K | KQB2N50 | SSM3K337R | FDFMA2P029Z | SI7772DP | SSM3K56FS

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