FDM606P Specs and Replacement

Type Designator: FDM606P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: MICROFET3X2-8

FDM606P substitution

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FDM606P datasheet

 ..1. Size:322K  fairchild semi
 fdm606p.pdf pdf_icon

FDM606P

December 2004 FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Fast switching Semiconductor s advanced PowerTrench process that has rDS(ON) = 0.026 (Typ), VGS = -4.5V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ... See More ⇒

 9.1. Size:4926K  first semi
 fdm60r65an4g.pdf pdf_icon

FDM606P

FDM60R65AN4G Product Summary V = 650 V DS I D@25oC = 51A R = 59m DS(ON) TO-247-4 Features Benefits High Blocking Voltage Higher System Efficiency High Frequency Operation Parallel Device Convenience without thermal runaway Low on-resistance High Temperature Application Fast intrinsic diode with low reverse recovery Hard Switching & H... See More ⇒

Detailed specifications: FDI3652, FDI8442, FDJ127P, FDJ128N, FDJ128NF077, FDJ129P, FDM100-0045SP, FDM21-05QC, STP65NF06, FDM6296, FDMA1430JP, FDMA6676PZ, FDMA86108LZ, FDMA86251, FDMB506P, FDMC6688P, FDMC8010ET30

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.