FDM6296 Specs and Replacement

Type Designator: FDM6296

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 415 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: POWER33

FDM6296 substitution

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FDM6296 datasheet

 ..1. Size:209K  fairchild semi
 fdm6296.pdf pdf_icon

FDM6296

January 2007 FDM6296 tm Single N-Channel Logic-Level PowerTrench MOSFET 30V,11.5A, 10.5m Features General Description Max rDS(on) = 10.5m at VGS = 10V, ID = 11.5A This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform Max rDS(on) = 15m at VGS = 4.5V, ID = 10A well in Point of Load converters. Providing an optimiz... See More ⇒

Detailed specifications: FDI8442, FDJ127P, FDJ128N, FDJ128NF077, FDJ129P, FDM100-0045SP, FDM21-05QC, FDM606P, IRF1405, FDMA1430JP, FDMA6676PZ, FDMA86108LZ, FDMA86251, FDMB506P, FDMC6688P, FDMC8010ET30, FDMC86160ET100

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