All MOSFET. FDM6296 Datasheet

 

FDM6296 Datasheet and Replacement


   Type Designator: FDM6296
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: POWER33
 

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FDM6296 Datasheet (PDF)

 ..1. Size:209K  fairchild semi
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FDM6296

January 2007FDM6296tmSingle N-Channel Logic-Level PowerTrench MOSFET 30V,11.5A, 10.5mFeatures General Description Max rDS(on) = 10.5m at VGS = 10V, ID = 11.5AThis single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform Max rDS(on) = 15m at VGS = 4.5V, ID = 10Awell in Point of Load converters. Providing an optimiz

Datasheet: FDI8442 , FDJ127P , FDJ128N , FDJ128NF077 , FDJ129P , FDM100-0045SP , FDM21-05QC , FDM606P , NCEP15T14 , FDMA1430JP , FDMA6676PZ , FDMA86108LZ , FDMA86251 , FDMB506P , FDMC6688P , FDMC8010ET30 , FDMC86160ET100 .

History: IXFR30N110P

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