All MOSFET. FDMA6676PZ Datasheet

 

FDMA6676PZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMA6676PZ
   Marking Code: 675
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 477 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: MICROFET2X2

 FDMA6676PZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMA6676PZ Datasheet (PDF)

 ..1. Size:294K  fairchild semi
 fdma6676pz.pdf

FDMA6676PZ FDMA6676PZ

February 2015FDMA6676PZSingle P-Channel PowerTrench MOSFET-30 V, -11 A, 13.5 mFeatures General DescriptionThis device is an ultra low resistance P-Channel FET. It is Max rDS(on) = 13.5 m @ VGS = -10 Vdesigned for power line load switching applications and reverse 25V VGS Extended Operating Ratingpolarity protection. It is especially optimized for voltage rails that c

 9.1. Size:361K  fairchild semi
 fdma6023pzt.pdf

FDMA6676PZ FDMA6676PZ

June 2009FDMA6023PZTDual P-Channel PowerTrench MOSFET -20 V, -3.6 A, 60 mFeatures General Description Max rDS(on) = 60 m at VGS = -4.5 V, ID = -3.6 A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other Max rDS(on) = 80 m at VGS = -2.5 V, ID = -3.0 Aultraportable applications. It features two in

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRL3103D1

 

 
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