All MOSFET. FDMA6676PZ Datasheet

 

FDMA6676PZ Datasheet and Replacement


   Type Designator: FDMA6676PZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 477 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: MICROFET2X2
 

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FDMA6676PZ Datasheet (PDF)

 ..1. Size:294K  fairchild semi
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FDMA6676PZ

February 2015FDMA6676PZSingle P-Channel PowerTrench MOSFET-30 V, -11 A, 13.5 mFeatures General DescriptionThis device is an ultra low resistance P-Channel FET. It is Max rDS(on) = 13.5 m @ VGS = -10 Vdesigned for power line load switching applications and reverse 25V VGS Extended Operating Ratingpolarity protection. It is especially optimized for voltage rails that c

 9.1. Size:361K  fairchild semi
 fdma6023pzt.pdf pdf_icon

FDMA6676PZ

June 2009FDMA6023PZTDual P-Channel PowerTrench MOSFET -20 V, -3.6 A, 60 mFeatures General Description Max rDS(on) = 60 m at VGS = -4.5 V, ID = -3.6 A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other Max rDS(on) = 80 m at VGS = -2.5 V, ID = -3.0 Aultraportable applications. It features two in

Datasheet: FDJ128N , FDJ128NF077 , FDJ129P , FDM100-0045SP , FDM21-05QC , FDM606P , FDM6296 , FDMA1430JP , RU7088R , FDMA86108LZ , FDMA86251 , FDMB506P , FDMC6688P , FDMC8010ET30 , FDMC86160ET100 , FDMC86260ET150 , FDMC86262P .

History: TPA70R450C

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