FDMA6676PZ Specs and Replacement

Type Designator: FDMA6676PZ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 477 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: MICROFET2X2

FDMA6676PZ substitution

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FDMA6676PZ datasheet

 ..1. Size:294K  fairchild semi
 fdma6676pz.pdf pdf_icon

FDMA6676PZ

February 2015 FDMA6676PZ Single P-Channel PowerTrench MOSFET -30 V, -11 A, 13.5 m Features General Description This device is an ultra low resistance P-Channel FET. It is Max rDS(on) = 13.5 m @ VGS = -10 V designed for power line load switching applications and reverse 25V VGS Extended Operating Rating polarity protection. It is especially optimized for voltage rails that c... See More ⇒

 9.1. Size:361K  fairchild semi
 fdma6023pzt.pdf pdf_icon

FDMA6676PZ

June 2009 FDMA6023PZT Dual P-Channel PowerTrench MOSFET -20 V, -3.6 A, 60 m Features General Description Max rDS(on) = 60 m at VGS = -4.5 V, ID = -3.6 A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other Max rDS(on) = 80 m at VGS = -2.5 V, ID = -3.0 A ultraportable applications. It features two in... See More ⇒

Detailed specifications: FDJ128N, FDJ128NF077, FDJ129P, FDM100-0045SP, FDM21-05QC, FDM606P, FDM6296, FDMA1430JP, IRFZ48N, FDMA86108LZ, FDMA86251, FDMB506P, FDMC6688P, FDMC8010ET30, FDMC86160ET100, FDMC86260ET150, FDMC86262P

Keywords - FDMA6676PZ MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.