All MOSFET. FDMB506P Datasheet

 

FDMB506P Datasheet and Replacement


   Type Designator: FDMB506P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 351 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: MICROFET3X1.9
 

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FDMB506P Datasheet (PDF)

 ..1. Size:212K  fairchild semi
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FDMB506P

December 2005 FDMB506P P-Channel 1.8V Logic Level PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild 6.8 A, 20V. RDS(ON) = 30 m @ VGS = 4.5V Semiconductors advanced PowerTrench process that RDS(ON) = 38 m @ VGS = 2.5V has been especially tailored to minimize the on-state RDS(ON) = 70 m @ VGS = 1.

Datasheet: FDM100-0045SP , FDM21-05QC , FDM606P , FDM6296 , FDMA1430JP , FDMA6676PZ , FDMA86108LZ , FDMA86251 , 60N06 , FDMC6688P , FDMC8010ET30 , FDMC86160ET100 , FDMC86260ET150 , FDMC86262P , FDMC86340ET80 , FDMC86570LET60 , FDMC8676 .

History: 2SK3065T100 | JCS4AN120SA

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