FDMB506P Specs and Replacement

Type Designator: FDMB506P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 351 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: MICROFET3X1.9

FDMB506P substitution

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FDMB506P datasheet

 ..1. Size:212K  fairchild semi
 fdmb506p.pdf pdf_icon

FDMB506P

December 2005 FDMB506P P-Channel 1.8V Logic Level PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild 6.8 A, 20V. RDS(ON) = 30 m @ VGS = 4.5V Semiconductor s advanced PowerTrench process that RDS(ON) = 38 m @ VGS = 2.5V has been especially tailored to minimize the on-state RDS(ON) = 70 m @ VGS = 1.... See More ⇒

Detailed specifications: FDM100-0045SP, FDM21-05QC, FDM606P, FDM6296, FDMA1430JP, FDMA6676PZ, FDMA86108LZ, FDMA86251, IRLB3034, FDMC6688P, FDMC8010ET30, FDMC86160ET100, FDMC86260ET150, FDMC86262P, FDMC86340ET80, FDMC86570LET60, FDMC8676

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