FDME0106NZT Specs and Replacement

Type Designator: FDME0106NZT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 203 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: MICROFET1.6X1.6THIN

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FDME0106NZT datasheet

 ..1. Size:260K  fairchild semi
 fdme0106nzt.pdf pdf_icon

FDME0106NZT

February 2012 FDME0106NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32... See More ⇒

Detailed specifications: FDMC86262P, FDMC86340ET80, FDMC86570LET60, FDMC8676, FDMC8678S, FDMD85100, FDMD86100, FDMD8900, IRF730, FDMS0308CS, FDMS8050ET30, FDMS86150ET100, FDMS86202ET120, FDMS86255ET150, FDMS86350ET80, FDMS86369F085, FDMS86550ET60

Keywords - FDME0106NZT MOSFET specs

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