All MOSFET. FDME0106NZT Datasheet

 

FDME0106NZT MOSFET. Datasheet pdf. Equivalent

Type Designator: FDME0106NZT

SMD Transistor Code: 8T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 203 pF

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: MicroFET1.6X1.6Thin

FDME0106NZT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDME0106NZT Datasheet (PDF)

1.1. fdme0106nzt.pdf Size:260K _upd-mosfet

FDME0106NZT
FDME0106NZT

February 2012 FDME0106NZT N-Channel PowerTrench® MOSFET 20 V, 9 A, 18 mΩ Features General Description Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32

Datasheet: FDMC86262P , FDMC86340ET80 , FDMC86570LET60 , FDMC8676 , FDMC8678S , FDMD85100 , FDMD86100 , FDMD8900 , APT50M38JFLL , FDMS0308CS , FDMS8050ET30 , FDMS86150ET100 , FDMS86202ET120 , FDMS86255ET150 , FDMS86350ET80 , FDMS86369_F085 , FDMS86550ET60 .

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