All MOSFET. FDME0106NZT Datasheet

 

FDME0106NZT MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDME0106NZT
   Marking Code: 8T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: MICROFET1.6X1.6THIN

 FDME0106NZT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDME0106NZT Datasheet (PDF)

 ..1. Size:260K  fairchild semi
 fdme0106nzt.pdf

FDME0106NZT FDME0106NZT

February 2012FDME0106NZTN-Channel PowerTrench MOSFET 20 V, 9 A, 18 mFeatures General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 AThis Single N-Channel MOSFET has been designed usingFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32

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History: NVMFD024N06C | FDD86102LZ | KCY3303S | BL6N120-W | CES2301

 

 
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