All MOSFET. FDME0106NZT Datasheet

 

FDME0106NZT Datasheet and Replacement


   Type Designator: FDME0106NZT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: MICROFET1.6X1.6THIN
      - MOSFET Cross-Reference Search

 

FDME0106NZT Datasheet (PDF)

 ..1. Size:260K  fairchild semi
 fdme0106nzt.pdf pdf_icon

FDME0106NZT

February 2012FDME0106NZTN-Channel PowerTrench MOSFET 20 V, 9 A, 18 mFeatures General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 AThis Single N-Channel MOSFET has been designed usingFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SVF10N65CK | KNB2710A | STD50N03L-1 | STD4NK60Z | BUZ104 | 2SK1314L | MMQ60R115PCTH

Keywords - FDME0106NZT MOSFET datasheet

 FDME0106NZT cross reference
 FDME0106NZT equivalent finder
 FDME0106NZT lookup
 FDME0106NZT substitution
 FDME0106NZT replacement

 

 
Back to Top

 


 
.