FDME0106NZT MOSFET. Datasheet pdf. Equivalent
Type Designator: FDME0106NZT
SMD Transistor Code: 8T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.1 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 203 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: MicroFET1.6X1.6Thin
FDME0106NZT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDME0106NZT Datasheet (PDF)
1.1. fdme0106nzt.pdf 
Size:260K _upd-mosfet
February 2012 FDME0106NZT N-Channel PowerTrench® MOSFET 20 V, 9 A, 18 mΩ Features General Description Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32
Datasheet: FDMC86262P , FDMC86340ET80 , FDMC86570LET60 , FDMC8676 , FDMC8678S , FDMD85100 , FDMD86100 , FDMD8900 , APT50M38JFLL , FDMS0308CS , FDMS8050ET30 , FDMS86150ET100 , FDMS86202ET120 , FDMS86255ET150 , FDMS86350ET80 , FDMS86369_F085 , FDMS86550ET60 .
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