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FDME0106NZT Datasheet and Replacement


   Type Designator: FDME0106NZT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: MICROFET1.6X1.6THIN
 

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FDME0106NZT Datasheet (PDF)

 ..1. Size:260K  fairchild semi
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FDME0106NZT

February 2012FDME0106NZTN-Channel PowerTrench MOSFET 20 V, 9 A, 18 mFeatures General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 AThis Single N-Channel MOSFET has been designed usingFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32

Datasheet: FDMC86262P , FDMC86340ET80 , FDMC86570LET60 , FDMC8676 , FDMC8678S , FDMD85100 , FDMD86100 , FDMD8900 , BS170 , FDMS0308CS , FDMS8050ET30 , FDMS86150ET100 , FDMS86202ET120 , FDMS86255ET150 , FDMS86350ET80 , FDMS86369F085 , FDMS86550ET60 .

History: APM2054NU | NCE70N1K1R | SFF2N60-KR | OSG70R2K6PF | TPCF8004 | IRF7Y1405CM | NCE60N640

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