FDP14AN06LA0 Datasheet and Replacement
Type Designator: FDP14AN06LA0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 67 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 169 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0116 Ohm
Package: TO-220AB
FDP14AN06LA0 substitution
FDP14AN06LA0 Datasheet (PDF)
fdb14an06la0 fdp14an06la0.pdf

January 2004FDB14AN06LA0 / FDP14AN06LA0N-Channel PowerTrench MOSFET60V, 60A, 14.6mFeatures Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pu
fdp14n30 fdpf14n30.pdf

February 2007TMUniFETFDP14N30 / FDPF14N30300V N-Channel MOSFETFeatures Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 18 nC)stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especiall
Datasheet: FDMT800152DC , FDN336P-NL , FDN359BNF095 , FDN86501LZ , FDP020N06BF102 , FDP10AN06A0 , FDP120AN15A0 , FDP13AN06A0 , 2N7000 , FDP15N50 , FDP15N65 , FDP16N50 , FDP20AN06A0 , FDP24AN06LA0 , FDP2570 , FDP2670 , FDP3205 .
History: PSMN7R0-60YS | AM2394NE | APT6029BLL | APT38N60BC6 | APT6029SFLLG | CEU06N7 | MTP5614N6
Keywords - FDP14AN06LA0 MOSFET datasheet
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History: PSMN7R0-60YS | AM2394NE | APT6029BLL | APT38N60BC6 | APT6029SFLLG | CEU06N7 | MTP5614N6



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