FDP14AN06LA0 Specs and Replacement

Type Designator: FDP14AN06LA0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 169 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0116 Ohm

Package: TO-220AB

FDP14AN06LA0 substitution

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FDP14AN06LA0 datasheet

 ..1. Size:247K  fairchild semi
 fdb14an06la0 fdp14an06la0.pdf pdf_icon

FDP14AN06LA0

January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel PowerTrench MOSFET 60V, 60A, 14.6m Features Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pu... See More ⇒

 9.1. Size:483K  fairchild semi
 fdp14n30 fdpf14n30.pdf pdf_icon

FDP14AN06LA0

February 2007 TM UniFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 18 nC) stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especiall... See More ⇒

Detailed specifications: FDMT800152DC, FDN336P-NL, FDN359BNF095, FDN86501LZ, FDP020N06BF102, FDP10AN06A0, FDP120AN15A0, FDP13AN06A0, AON7408, FDP15N50, FDP15N65, FDP16N50, FDP20AN06A0, FDP24AN06LA0, FDP2570, FDP2670, FDP3205

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