FDP20AN06A0 Specs and Replacement

Type Designator: FDP20AN06A0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 98 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-220AB

FDP20AN06A0 substitution

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FDP20AN06A0 datasheet

 ..1. Size:613K  fairchild semi
fdb20an06a0 fdp20an06a0.pdf pdf_icon

FDP20AN06A0

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 ..2. Size:617K  fairchild semi
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FDP20AN06A0

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 9.1. Size:838K  fairchild semi
fdp20n50f fdpf20n50ft.pdf pdf_icon

FDP20AN06A0

October 2007 UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26 Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10A Description Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF) tors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Fast reve... See More ⇒

 9.2. Size:150K  fairchild semi
fdh20n40 fdp20n40.pdf pdf_icon

FDP20AN06A0

October 2002 FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyb... See More ⇒

Detailed specifications: FDP020N06BF102, FDP10AN06A0, FDP120AN15A0, FDP13AN06A0, FDP14AN06LA0, FDP15N50, FDP15N65, FDP16N50, IRF9540N, FDP24AN06LA0, FDP2570, FDP2670, FDP3205, FDP5500, FDP5645, FDP5N50, FDP75N08

Keywords - FDP20AN06A0 MOSFET specs

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