FDP20AN06A0 Datasheet and Replacement

June 2003FDB20AN06A0 / FDP20AN06A0N-Channel PowerTrench MOSFET60V, 45A, 20mFeatures Applications rDS(ON) = 17m (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

June 2003FDB20AN06A0 / FDP20AN06A0N-Channel PowerTrench MOSFET60V, 45A, 20mFeatures Applications rDS(ON) = 17m (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

October 2007UniFETTMFDP20N50F / FDPF20N50FTtmN-Channel MOSFET, FRFET 500V, 20A, 0.26Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10ADescription Low gate charge ( Typ. 50nC)These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF)tors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Fast reve

October 2002FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON) Flyb

April 2007TMUniFETFDP20N50 / FDPF20N50500V N-Channel MOSFETFeatures Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC)stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has been especially

November 2013FDP20N50 / FDPF20N50 / FDPF20N50TN-Channel UniFETTM MOSFET500 V, 20 A, 230 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC)This MOSFET is tailored to reduce on-state resistance, and to

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDP20N50DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS These devices are well suited for high efficient switchedmode power supplies and active power factor correction.ABSOLUTE MAXI