FDP24AN06LA0 Specs and Replacement

Type Designator: FDP24AN06LA0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 101 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TO-220AB

FDP24AN06LA0 substitution

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FDP24AN06LA0 datasheet

 ..1. Size:245K  fairchild semi
 fdb24an06la0 fdp24an06la0.pdf pdf_icon

FDP24AN06LA0

January 2004 FDB24AN06LA0 / FDP24AN06LA0 N-Channel PowerTrench MOSFET 60V, 36A, 24m Features Applications rDS(ON) = 20m (Typ.), VGS = 5V, ID = 36A Motor / Body Load Control Qg(tot) = 16nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)... See More ⇒

 9.1. Size:296K  fairchild semi
 fdp24n40 fdpf24n40.pdf pdf_icon

FDP24AN06LA0

December 2007 UniFETTM FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 46nC) stripe, DMOS technology. Low Crss ( Typ. 25pF) This advanced technology has b... See More ⇒

 9.2. Size:1516K  onsemi
 fdp24n40.pdf pdf_icon

FDP24AN06LA0

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Detailed specifications: FDP10AN06A0, FDP120AN15A0, FDP13AN06A0, FDP14AN06LA0, FDP15N50, FDP15N65, FDP16N50, FDP20AN06A0, IRF4905, FDP2570, FDP2670, FDP3205, FDP5500, FDP5645, FDP5N50, FDP75N08, FDP79N15

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