All MOSFET. FDP24AN06LA0 Datasheet

 

FDP24AN06LA0 Datasheet and Replacement


   Type Designator: FDP24AN06LA0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 101 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-220AB
 

 FDP24AN06LA0 substitution

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FDP24AN06LA0 Datasheet (PDF)

 ..1. Size:245K  fairchild semi
 fdb24an06la0 fdp24an06la0.pdf pdf_icon

FDP24AN06LA0

January 2004FDB24AN06LA0 / FDP24AN06LA0N-Channel PowerTrench MOSFET60V, 36A, 24mFeatures Applications rDS(ON) = 20m (Typ.), VGS = 5V, ID = 36A Motor / Body Load Control Qg(tot) = 16nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

 9.1. Size:296K  fairchild semi
 fdp24n40 fdpf24n40.pdf pdf_icon

FDP24AN06LA0

December 2007UniFETTMFDP24N40 / FDPF24N40N-Channel MOSFET 400V, 24A, 0.175Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 46nC)stripe, DMOS technology. Low Crss ( Typ. 25pF)This advanced technology has b

 9.2. Size:1516K  onsemi
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FDP24AN06LA0

Datasheet: FDP10AN06A0 , FDP120AN15A0 , FDP13AN06A0 , FDP14AN06LA0 , FDP15N50 , FDP15N65 , FDP16N50 , FDP20AN06A0 , IRF4905 , FDP2570 , FDP2670 , FDP3205 , FDP5500 , FDP5645 , FDP5N50 , FDP75N08 , FDP79N15 .

History: CPH3360 | AM4431P | IRFP9140PBF | QM4014D | APT20M20LFLLG | AFP2307A | RSM002P03T2L

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