FDP3205 Specs and Replacement

Type Designator: FDP3205

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 147 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO-220

FDP3205 substitution

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FDP3205 datasheet

 ..1. Size:395K  fairchild semi
 fdp3205.pdf pdf_icon

FDP3205

May 2008 FDP3205 N-Channel PowerTrench MOSFET 55V, 100A, 7.5m Features Description RDS(on) = 6.1m ( Typ.)@ VGS = 10V, ID = 59A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has High performance trench technology for extermly low RDS(on) been especially tailored to minimize the on-state resistance and yet maint... See More ⇒

Detailed specifications: FDP14AN06LA0, FDP15N50, FDP15N65, FDP16N50, FDP20AN06A0, FDP24AN06LA0, FDP2570, FDP2670, K3569, FDP5500, FDP5645, FDP5N50, FDP75N08, FDP79N15, FDP8441F085, FDP8442, FDP8443

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