All MOSFET. FDP3205 Datasheet

 

FDP3205 Datasheet and Replacement


   Type Designator: FDP3205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 147 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-220
 

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FDP3205 Datasheet (PDF)

 ..1. Size:395K  fairchild semi
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FDP3205

May 2008FDP3205N-Channel PowerTrench MOSFET 55V, 100A, 7.5mFeatures Description RDS(on) = 6.1m ( Typ.)@ VGS = 10V, ID = 59A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has High performance trench technology for extermly low RDS(on) been especially tailored to minimize the on-state resistance and yet maint

Datasheet: FDP14AN06LA0 , FDP15N50 , FDP15N65 , FDP16N50 , FDP20AN06A0 , FDP24AN06LA0 , FDP2570 , FDP2670 , SPP20N60C3 , FDP5500 , FDP5645 , FDP5N50 , FDP75N08 , FDP79N15 , FDP8441F085 , FDP8442 , FDP8443 .

History: GSM8931 | AP9468GH | BUK138-50DL | HGD035N08AL | CS10N60A8HD | VS3640AC | RFP45N06

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