FDP75N08 Specs and Replacement

Type Designator: FDP75N08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 137 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 212 nS

Cossⓘ - Output Capacitance: 738 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-220

FDP75N08 substitution

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FDP75N08 datasheet

 ..1. Size:626K  fairchild semi
 fdp75n08 fdp75n08a.pdf pdf_icon

FDP75N08

July 2006 TM UniFET FDP75N08A 75V N-Channel MOSFET Features Description 75A, 75V, RDS(on) = 0.011 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 145nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 86pF) This advanced technology has been especially tailored to ... See More ⇒

 0.1. Size:1266K  onsemi
 fdp75n08a.pdf pdf_icon

FDP75N08

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDP20AN06A0, FDP24AN06LA0, FDP2570, FDP2670, FDP3205, FDP5500, FDP5645, FDP5N50, SKD502T, FDP79N15, FDP8441F085, FDP8442, FDP8443, FDP8878, FDP8N50NZU, FDPC5018SG, FDPC5030SG

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