All MOSFET. FDP79N15 Datasheet

 

FDP79N15 Datasheet and Replacement


   Type Designator: FDP79N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 463 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 79 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-220
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FDP79N15 Datasheet (PDF)

 ..1. Size:395K  fairchild semi
 fdp79n15 fdpf79n15.pdf pdf_icon

FDP79N15

April 2007 TMUniFETFDP79N15 / FDPF79N15 150V N-Channel MOSFETFeatures Description 79A, 150V, RDS(on) = 0.03 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 56 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 96pF) stripe, DMOS technology. Fast switchingThis advanced technology ha

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRF6215SPBF

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