FDP79N15 Datasheet and Replacement
Type Designator: FDP79N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 463 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 79 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 730 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-220
FDP79N15 substitution
FDP79N15 Datasheet (PDF)
fdp79n15 fdpf79n15.pdf

April 2007 TMUniFETFDP79N15 / FDPF79N15 150V N-Channel MOSFETFeatures Description 79A, 150V, RDS(on) = 0.03 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 56 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 96pF) stripe, DMOS technology. Fast switchingThis advanced technology ha
Datasheet: FDP24AN06LA0 , FDP2570 , FDP2670 , FDP3205 , FDP5500 , FDP5645 , FDP5N50 , FDP75N08 , IRFB3607 , FDP8441F085 , FDP8442 , FDP8443 , FDP8878 , FDP8N50NZU , FDPC5018SG , FDPC5030SG , FDPF12N35 .
History: NTBG160N120SC1
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History: NTBG160N120SC1



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