FDP79N15 Specs and Replacement

Type Designator: FDP79N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 463 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 79 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 730 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-220

FDP79N15 substitution

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FDP79N15 datasheet

 ..1. Size:395K  fairchild semi
 fdp79n15 fdpf79n15.pdf pdf_icon

FDP79N15

April 2007 TM UniFET FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description 79A, 150V, RDS(on) = 0.03 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 56 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 96pF) stripe, DMOS technology. Fast switching This advanced technology ha... See More ⇒

Detailed specifications: FDP24AN06LA0, FDP2570, FDP2670, FDP3205, FDP5500, FDP5645, FDP5N50, FDP75N08, K4145, FDP8441F085, FDP8442, FDP8443, FDP8878, FDP8N50NZU, FDPC5018SG, FDPC5030SG, FDPF12N35

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