FDR6580 Specs and Replacement

Type Designator: FDR6580

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SSOT-8

FDR6580 substitution

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FDR6580 datasheet

 ..1. Size:238K  fairchild semi
 fdr6580.pdf pdf_icon

FDR6580

April 1999 ADVANCE INFORMATION FDR6580 N-Chennal 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using 11 A, 20 V. RDS(ON) = 0.009 @ VGS = 4.5 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.013 @ VGS = 2.5 V. that has been especially tailored to minimize the on-state resistance and ye... See More ⇒

Detailed specifications: FDPF14N30T, FDPF15N65YDTU, FDPF18N20F, FDPF52N20T, FDPF79N15, FDPF7N50, FDPF7N50F, FDPF8N50NZT, IRFP250, FDR6674A, FDR840P, FDR842P, FDR844P, FDS2070N3, FDS2070N7, FDS2170N3, FDS2170N7

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.