All MOSFET. FDR6580 Datasheet

 

FDR6580 Datasheet and Replacement


   Type Designator: FDR6580
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SSOT-8
 

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FDR6580 Datasheet (PDF)

 ..1. Size:238K  fairchild semi
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FDR6580

April 1999ADVANCE INFORMATIONFDR6580N-Chennal 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced using 11 A, 20 V. RDS(ON) = 0.009 @ VGS = 4.5 VFairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.013 @ VGS = 2.5 V.that has been especially tailored to minimize the on-stateresistance and ye

Datasheet: FDPF14N30T , FDPF15N65YDTU , FDPF18N20F , FDPF52N20T , FDPF79N15 , FDPF7N50 , FDPF7N50F , FDPF8N50NZT , STF13NM60N , FDR6674A , FDR840P , FDR842P , FDR844P , FDS2070N3 , FDS2070N7 , FDS2170N3 , FDS2170N7 .

History: CEP93A3 | UTC654 | SSM3K56CT | AUIRFP4227 | VBZE04N03 | IXTJ3N150 | AM90N06-04M2B

Keywords - FDR6580 MOSFET datasheet

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