All MOSFET. FDR6674A Datasheet

 

FDR6674A Datasheet and Replacement


   Type Designator: FDR6674A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SSOT-8
 

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FDR6674A Datasheet (PDF)

 ..1. Size:250K  fairchild semi
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FDR6674A

April 2001 FDR6674A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

Datasheet: FDPF15N65YDTU , FDPF18N20F , FDPF52N20T , FDPF79N15 , FDPF7N50 , FDPF7N50F , FDPF8N50NZT , FDR6580 , P0903BDG , FDR840P , FDR842P , FDR844P , FDS2070N3 , FDS2070N7 , FDS2170N3 , FDS2170N7 , FDS3170N7 .

History: SSW65R065SFD3 | RU30E60M2 | NCE80T320D | 2SK2327 | NP40N055KHE | STU2030PLS | ZXM62P03E6

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