FDR6674A Datasheet and Replacement
Type Designator: FDR6674A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: SSOT-8
FDR6674A Datasheet (PDF)
fdr6674a.pdf

April 2001 FDR6674A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
Datasheet: FDPF15N65YDTU , FDPF18N20F , FDPF52N20T , FDPF79N15 , FDPF7N50 , FDPF7N50F , FDPF8N50NZT , FDR6580 , P0903BDG , FDR840P , FDR842P , FDR844P , FDS2070N3 , FDS2070N7 , FDS2170N3 , FDS2170N7 , FDS3170N7 .
History: H5N2004DL | STF8220 | NCE80T320D | TSM8N70CI
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History: H5N2004DL | STF8220 | NCE80T320D | TSM8N70CI



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