FDR6674A Datasheet and Replacement
Type Designator: FDR6674A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 11.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: SSOT-8
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FDR6674A Datasheet (PDF)
fdr6674a.pdf

April 2001 FDR6674A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MRF5007 | IRLR024 | CED05N8 | BUZ84 | TSD5N60M | AON6794 | BL10N70-A
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History: MRF5007 | IRLR024 | CED05N8 | BUZ84 | TSD5N60M | AON6794 | BL10N70-A



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