All MOSFET. FDR6674A Datasheet

 

FDR6674A Datasheet and Replacement


   Type Designator: FDR6674A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 11.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SSOT-8
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FDR6674A Datasheet (PDF)

 ..1. Size:250K  fairchild semi
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FDR6674A

April 2001 FDR6674A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

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History: MRF5007 | IRLR024 | CED05N8 | BUZ84 | TSD5N60M | AON6794 | BL10N70-A

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