FDR842P Specs and Replacement

Type Designator: FDR842P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 2135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SSOT-8

FDR842P substitution

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FDR842P datasheet

 ..1. Size:139K  fairchild semi
 fdr842p.pdf pdf_icon

FDR842P

December 2001 FDR842P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 11 A, 12 V RDS(ON) = 9 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 12 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 16 m @ VG... See More ⇒

 9.1. Size:87K  fairchild semi
 fdr844p.pdf pdf_icon

FDR842P

October 2001 FDR844P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 10 A, 20 V. RDS(ON) = 11 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 14 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 20 m @VGS = ... See More ⇒

 9.2. Size:222K  fairchild semi
 fdr840p.pdf pdf_icon

FDR842P

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Detailed specifications: FDPF52N20T, FDPF79N15, FDPF7N50, FDPF7N50F, FDPF8N50NZT, FDR6580, FDR6674A, FDR840P, 10N65, FDR844P, FDS2070N3, FDS2070N7, FDS2170N3, FDS2170N7, FDS3170N7, FDS3612, FDS3670

Keywords - FDR842P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.