FDR842P MOSFET: P-Ch, 12V, 11A. Full datasheet with pinout, specifications and replacement transistor list

FDR842P Datasheet (PDF)

..1. Size:139K fairchild semi
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December 2001 FDR842P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 11 A, 12 V RDS(ON) = 9 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 12 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 16 m @ VG

9.1. Size:87K fairchild semi
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October 2001 FDR844P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 10 A, 20 V. RDS(ON) = 11 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 14 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 20 m @VGS =

9.2. Size:222K fairchild semi
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December 2000FDR840PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET uses a rugged 10 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 Vgate PowerTrench process. It has been optimized forRDS(ON) = 17.5 m @ VGS = 2.5 Vpower management applications with a wide range ofgate drive voltage (2.5V

Datasheet: FDPF52N20T , FDPF79N15 , FDPF7N50 , FDPF7N50F , FDPF8N50NZT , FDR6580 , FDR6674A , FDR840P , 10N65 , FDR844P , FDS2070N3 , FDS2070N7 , FDS2170N3 , FDS2170N7 , FDS3170N7 , FDS3612 , FDS3670 .