FDR844P
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDR844P
Marking Code: .844P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 53
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 884
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011
Ohm
Package: SSOT-8
FDR844P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDR844P
Datasheet (PDF)
..1. Size:87K fairchild semi
fdr844p.pdf
October 2001 FDR844P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 10 A, 20 V. RDS(ON) = 11 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 14 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 20 m @VGS =
9.1. Size:139K fairchild semi
fdr842p.pdf
December 2001 FDR842P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 11 A, 12 V RDS(ON) = 9 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 12 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 16 m @ VG
9.2. Size:222K fairchild semi
fdr840p.pdf
December 2000FDR840PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET uses a rugged 10 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 Vgate PowerTrench process. It has been optimized forRDS(ON) = 17.5 m @ VGS = 2.5 Vpower management applications with a wide range ofgate drive voltage (2.5V
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