FDS2070N3 Specs and Replacement

Type Designator: FDS2070N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 102 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: SO-8

FDS2070N3 substitution

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FDS2070N3 datasheet

 ..1. Size:181K  fairchild semi
 fds2070n3.pdf pdf_icon

FDS2070N3

February 2004 FDS2070N3 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.1 A, 150 V. RDS(ON) = 78 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High performan... See More ⇒

 6.1. Size:174K  fairchild semi
 fds2070n7.pdf pdf_icon

FDS2070N3

February 2004 FDS2070N7 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.1 A, 150 V. RDS(ON) = 78 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High performan... See More ⇒

Detailed specifications: FDPF7N50, FDPF7N50F, FDPF8N50NZT, FDR6580, FDR6674A, FDR840P, FDR842P, FDR844P, RFP50N06, FDS2070N7, FDS2170N3, FDS2170N7, FDS3170N7, FDS3612, FDS3670, FDS3680, FDS3682

Keywords - FDS2070N3 MOSFET specs

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