All MOSFET. FDS2070N3 Datasheet

 

FDS2070N3 Datasheet and Replacement


   Type Designator: FDS2070N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: SO-8
 

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FDS2070N3 Datasheet (PDF)

 ..1. Size:181K  fairchild semi
 fds2070n3.pdf pdf_icon

FDS2070N3

February 2004FDS2070N3150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.1 A, 150 V. RDS(ON) = 78 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 88 m @ VGS = 6.0 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for High performan

 6.1. Size:174K  fairchild semi
 fds2070n7.pdf pdf_icon

FDS2070N3

February 2004FDS2070N7150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.1 A, 150 V. RDS(ON) = 78 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 88 m @ VGS = 6.0 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for High performan

Datasheet: FDPF7N50 , FDPF7N50F , FDPF8N50NZT , FDR6580 , FDR6674A , FDR840P , FDR842P , FDR844P , RFP50N06 , FDS2070N7 , FDS2170N3 , FDS2170N7 , FDS3170N7 , FDS3612 , FDS3670 , FDS3680 , FDS3682 .

History: F8N60 | IPAN60R800CE

Keywords - FDS2070N3 MOSFET datasheet

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