FDS2070N7 Datasheet and Replacement
Type Designator: FDS2070N7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 102 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
Package: SO-8
FDS2070N7 Datasheet (PDF)
fds2070n7.pdf

February 2004FDS2070N7150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.1 A, 150 V. RDS(ON) = 78 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 88 m @ VGS = 6.0 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for High performan
fds2070n3.pdf

February 2004FDS2070N3150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.1 A, 150 V. RDS(ON) = 78 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 88 m @ VGS = 6.0 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for High performan
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - FDS2070N7 MOSFET datasheet
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History: FDD8750 | SSF10N60



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