All MOSFET. FDS2170N7 Datasheet

 

FDS2170N7 Datasheet and Replacement


   Type Designator: FDS2170N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.128 Ohm
   Package: SO-8
 

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FDS2170N7 Datasheet (PDF)

 ..1. Size:186K  fairchild semi
 fds2170n7.pdf pdf_icon

FDS2170N7

December 2003 FDS2170N7 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 200 V. RDS(ON) = 128 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

 6.1. Size:180K  fairchild semi
 fds2170n3.pdf pdf_icon

FDS2170N7

January 2004FDS2170N3200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.0 A, 200 V. RDS(ON) = 128 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional High performance trench technology for extremelyswitching PWM controllers. It has been optimized fo

Datasheet: FDR6580 , FDR6674A , FDR840P , FDR842P , FDR844P , FDS2070N3 , FDS2070N7 , FDS2170N3 , 75N75 , FDS3170N7 , FDS3612 , FDS3670 , FDS3680 , FDS3682 , FDS4070N3 , FDS4070N7 , FDS4072N3 .

History: SSM6N29TU | AFP3411 | IXTT96N20P | QM4014D | ELM13402CA | NCE65T130T | NVHL020N120SC1

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