FDS4780 Specs and Replacement

Type Designator: FDS4780

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 384 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: SO-8

FDS4780 substitution

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FDS4780 datasheet

 ..1. Size:330K  fairchild semi
 fds4780.pdf pdf_icon

FDS4780

March 2003 FDS4780 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 10.8 A, 40 V. RDS(ON) = 10.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (30 nC) switching PWM controllers. It has been optimized for low gate char... See More ⇒

 9.1. Size:102K  fairchild semi
 fds4770.pdf pdf_icon

FDS4780

May 2004 FDS4770 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13.2 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fas... See More ⇒

Detailed specifications: FDS4070N3, FDS4070N7, FDS4072N3, FDS4072N7, FDS4080N3, FDS4080N7, FDS4410A, FDS4770, 7N60, FDS5170N7, FDS5682, FDS5692Z, FDS6064N3, FDS6064N7, FDS6162N3, FDS6162N7, FDS6299S

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