All MOSFET. FDS4780 Datasheet

 

FDS4780 Datasheet and Replacement


   Type Designator: FDS4780
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 384 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: SO-8
 

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FDS4780 Datasheet (PDF)

 ..1. Size:330K  fairchild semi
 fds4780.pdf pdf_icon

FDS4780

March 2003 FDS4780 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 10.8 A, 40 V. RDS(ON) = 10.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (30 nC) switching PWM controllers. It has been optimized for low gate char

 9.1. Size:102K  fairchild semi
 fds4770.pdf pdf_icon

FDS4780

May 2004FDS477040V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 13.2 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate charge switching PWM controllers. It has been optimized forlow gate charge, low RDS(ON) and fas

Datasheet: FDS4070N3 , FDS4070N7 , FDS4072N3 , FDS4072N7 , FDS4080N3 , FDS4080N7 , FDS4410A , FDS4770 , MMIS60R580P , FDS5170N7 , FDS5682 , FDS5692Z , FDS6064N3 , FDS6064N7 , FDS6162N3 , FDS6162N7 , FDS6299S .

History: P2703BAG | PHK4NQ10T | AP3A010MT | LSH60R290HF | H02N60SF | BLP12N10G-P | STD6N52K3

Keywords - FDS4780 MOSFET datasheet

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