All MOSFET. FDS5170N7 Datasheet

 

FDS5170N7 Datasheet and Replacement


   Type Designator: FDS5170N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 329 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO-8
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FDS5170N7 Datasheet (PDF)

 ..1. Size:199K  fairchild semi
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FDS5170N7

May 2003 FDS5170N7 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 10.6 A, 60 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 15 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe

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History: IRFI7536G | FDMS9620S | WMM11N80M3

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