FDS5170N7 Specs and Replacement

Type Designator: FDS5170N7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 329 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SO-8

FDS5170N7 substitution

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FDS5170N7 datasheet

 ..1. Size:199K  fairchild semi
 fds5170n7.pdf pdf_icon

FDS5170N7

May 2003 FDS5170N7 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 10.6 A, 60 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 15 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe... See More ⇒

Detailed specifications: FDS4070N7, FDS4072N3, FDS4072N7, FDS4080N3, FDS4080N7, FDS4410A, FDS4770, FDS4780, IRFZ48N, FDS5682, FDS5692Z, FDS6064N3, FDS6064N7, FDS6162N3, FDS6162N7, FDS6299S, FDS6572A

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