All MOSFET. FDS6064N7 Datasheet

 

FDS6064N7 Datasheet and Replacement


   Type Designator: FDS6064N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1403 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: SO-8
 

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FDS6064N7 Datasheet (PDF)

 ..1. Size:196K  fairchild semi
 fds6064n7.pdf pdf_icon

FDS6064N7

May 2003 FDS6064N7 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 20 V. RDS(ON) = 3.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 4 m @ VGS = 2.5 Vconverters using either synchronous or conventional RDS(ON) = 6 m @ VGS = 1.8 V switching PWM controllers. It has b

 6.1. Size:187K  fairchild semi
 fds6064n3.pdf pdf_icon

FDS6064N7

May 2003 FDS6064N3 20V N-Channel PowerTrench MOSFET General Description Applications This N-Channel MOSFET has been designed Synchronous rectifier specifically to improve the overall efficiency of DC/DC DC/DC converter converters using either synchronous or conventional switching PWM controllers. It has been optimized for FLMP SO-8 package: Enhanced thermal

Datasheet: FDS4080N7 , FDS4410A , FDS4770 , FDS4780 , FDS5170N7 , FDS5682 , FDS5692Z , FDS6064N3 , IRF9640 , FDS6162N3 , FDS6162N7 , FDS6299S , FDS6572A , FDS6609A , FDS6672A , FDS6673AZ , FDS6675A .

History: CJ3407 | CJ3401-HF

Keywords - FDS6064N7 MOSFET datasheet

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