All MOSFET. FDS6162N3 Datasheet

 

FDS6162N3 Datasheet and Replacement


   Type Designator: FDS6162N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 1473 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: SO-8
 

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FDS6162N3 Datasheet (PDF)

 ..1. Size:187K  fairchild semi
 fds6162n3.pdf pdf_icon

FDS6162N3

May 2003 FDS6162N3 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 4.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6.0 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe

 6.1. Size:195K  fairchild semi
 fds6162n7.pdf pdf_icon

FDS6162N3

May 2003 FDS6162N7 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 20 V RDS(ON) = 3.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5.0 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe

Datasheet: FDS4410A , FDS4770 , FDS4780 , FDS5170N7 , FDS5682 , FDS5692Z , FDS6064N3 , FDS6064N7 , 8N60 , FDS6162N7 , FDS6299S , FDS6572A , FDS6609A , FDS6672A , FDS6673AZ , FDS6675A , FDS6679Z .

History: IPC70N04S5-4R6 | AP9T15GH-HF | IRFU9110PBF | IPA65R1K0CE | RHP020N06T100 | SVF20NE50PN | TK16N60W

Keywords - FDS6162N3 MOSFET datasheet

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