FDS6162N3 Specs and Replacement

Type Designator: FDS6162N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 1473 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: SO-8

FDS6162N3 substitution

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FDS6162N3 datasheet

 ..1. Size:187K  fairchild semi
 fds6162n3.pdf pdf_icon

FDS6162N3

May 2003 FDS6162N3 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 4.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6.0 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe... See More ⇒

 6.1. Size:195K  fairchild semi
 fds6162n7.pdf pdf_icon

FDS6162N3

May 2003 FDS6162N7 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 20 V RDS(ON) = 3.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5.0 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe... See More ⇒

Detailed specifications: FDS4410A, FDS4770, FDS4780, FDS5170N7, FDS5682, FDS5692Z, FDS6064N3, FDS6064N7, IRFB7545, FDS6162N7, FDS6299S, FDS6572A, FDS6609A, FDS6672A, FDS6673AZ, FDS6675A, FDS6679Z

Keywords - FDS6162N3 MOSFET specs

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