All MOSFET. IRFR010 Datasheet

 

IRFR010 Datasheet and Replacement


   Type Designator: IRFR010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO252
 

 IRFR010 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRFR010 Datasheet (PDF)

 ..1. Size:169K  1
 irfr010 irfr012 irfr014 irfr015.pdf pdf_icon

IRFR010

 ..2. Size:279K  international rectifier
 irfr010 irfr012 irfu010 irfu012.pdf pdf_icon

IRFR010

 ..3. Size:309K  vishay
 irfr010 sihfr010.pdf pdf_icon

IRFR010

IRFR010, SiHFR010www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of ParallelingQgs (nC) 2.6 Excellent Temperature StabilityQgd (nC) 4.8 Material categorization: For definitions of complianceplease see www.vishay.com/doc?

 ..4. Size:1696K  vishay
 irfr010pbf sihfr010.pdf pdf_icon

IRFR010

IRFR010, SiHFR010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature StabilityQgs (nC) 2.6 Compliant to RoHS Directive 2002/95/ECQgd (nC) 4.8Configuration Single DESCRIPTIONThe Power MOSFET technology i

SHOW MORE

Datasheet: IRFPF30 , IRFPF40 , IRFPF50 , IRFPG30 , IRFPG40 , IRFPG50 , IRFPS37N50A , IRFPS59N60C , BS170 , IRFR012 , IRFR014 , IRFR014A , IRFR015 , IRFR020 , IRFR022 , IRFR024 , IRFR024A .

History: R6515ENZ | WMN25N80M3 | STD130N4F6AG

Keywords - IRFR010 MOSFET datasheet

 IRFR010 cross reference
 IRFR010 equivalent finder
 IRFR010 lookup
 IRFR010 substitution
 IRFR010 replacement

 

 
Back to Top

 


 
.