IRFR010 MOSFET Datasheet: N-Ch, 50V, 8.2A. Full specification with pinout and replacement list

IRFR010 Specs and Replacement

   Type Designator: IRFR010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO252

IRFR010 substitution

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IRFR010 datasheet

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..3. Size:309K vishay
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IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Qgs (nC) 2.6 Excellent Temperature Stability Qgd (nC) 4.8 Material categorization For definitions of compliance please see www.vishay.com/doc?... See More ⇒

..4. Size:1696K vishay
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IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature Stability Qgs (nC) 2.6 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 4.8 Configuration Single DESCRIPTION The Power MOSFET technology i... See More ⇒