FDS7288N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS7288N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 845 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: SO-8
FDS7288N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS7288N3 Datasheet (PDF)
fds7288n3.pdf
February 2004 FDS7288N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET in the thermally enhanced 20.5 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V SO8 FLMP package has been designed specifically to RDS(ON) = 5.6 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for
fds7296n3.pdf
September 2004FDS7296N330V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET in the thermally enhanced 15 A, 30 V RDS(ON) = 8 m @ VGS = 10 VSO8 FLMP package has been designed specifically toRDS(ON) = 11 m @ VGS = 4.5 Vimprove the overall efficiency of DC/DC converters.Providing a balance of low RDS(ON) and Qg it is ideal f
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