IRFR014A Specs and Replacement

Type Designator: IRFR014A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO252

IRFR014A substitution

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IRFR014A datasheet

 ..1. Size:431K  1
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IRFR014A

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 ..2. Size:494K  samsung
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IRFR014A

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.2 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.097 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara... See More ⇒

 7.1. Size:169K  1
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IRFR014A

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 7.2. Size:172K  international rectifier
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IRFR014A

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Detailed specifications: IRFPG30, IRFPG40, IRFPG50, IRFPS37N50A, IRFPS59N60C, IRFR010, IRFR012, IRFR014, IRF740, IRFR015, IRFR020, IRFR022, IRFR024, IRFR024A, IRFR024N, IRFR025, IRFR110

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