IRFR014A Datasheet and Replacement
Type Designator: IRFR014A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO252
IRFR014A substitution
IRFR014A Datasheet (PDF)
irfr014a.pdf
Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.2 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.097 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
Datasheet: IRFPG30 , IRFPG40 , IRFPG50 , IRFPS37N50A , IRFPS59N60C , IRFR010 , IRFR012 , IRFR014 , IRF740 , IRFR015 , IRFR020 , IRFR022 , IRFR024 , IRFR024A , IRFR024N , IRFR025 , IRFR110 .
History: SML1004R2KN | HY3408AM | HM4264 | STD18N55M5 | WMK053N10HGS | TK9A60D | FQAF19N20
Keywords - IRFR014A MOSFET datasheet
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History: SML1004R2KN | HY3408AM | HM4264 | STD18N55M5 | WMK053N10HGS | TK9A60D | FQAF19N20
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