FDT3N40TF Specs and Replacement
Type Designator: FDT3N40TF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: SOT-223
FDT3N40TF substitution
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FDT3N40TF datasheet
fdt3n40tf.pdf
April 2013 FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 3.7 pF) pr... See More ⇒
fdt3n40.pdf
November 2009 TM UniFET FDT3N40 400V N-Channel MOSFET Features Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 3.7 pF) This advanced technology has been especially tailored to ... See More ⇒
Detailed specifications: FDS7760A, FDS7764S, FDS7779Z, FDS7788, FDS8670, FDS8812NZ, FDS8874, FDS9412A, IRFP250N, FDT461N, FDT55AN06LA0, FDU044AN03L, FDU068AN03L, FDU2572, FDU3580, FDU3706, FDU6030BL
Keywords - FDT3N40TF MOSFET specs
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