FDT3N40TF Datasheet and Replacement
Type Designator: FDT3N40TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: SOT-223
FDT3N40TF substitution
FDT3N40TF Datasheet (PDF)
fdt3n40tf.pdf

April 2013FDT3N40N-Channel UniFETTM MOSFET400 V, 2.0 A, 3.4 Features Description RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 3.7 pF)pr
fdt3n40.pdf

November 2009TMUniFETFDT3N40400V N-Channel MOSFETFeatures Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC)stripe, DMOS technology. Low Crss ( typical 3.7 pF)This advanced technology has been especially tailored to
Datasheet: FDS7760A , FDS7764S , FDS7779Z , FDS7788 , FDS8670 , FDS8812NZ , FDS8874 , FDS9412A , AON7408 , FDT461N , FDT55AN06LA0 , FDU044AN03L , FDU068AN03L , FDU2572 , FDU3580 , FDU3706 , FDU6030BL .
History: RU1H190S
Keywords - FDT3N40TF MOSFET datasheet
FDT3N40TF cross reference
FDT3N40TF equivalent finder
FDT3N40TF lookup
FDT3N40TF substitution
FDT3N40TF replacement
History: RU1H190S



LIST
Last Update
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
2sc1740 | c3229 | c2078 transistor | 2sc458 transistors | 2sa992 | 2sa970 | a970 | d2390 transistor