All MOSFET. FDT3N40TF Datasheet

 

FDT3N40TF Datasheet and Replacement


   Type Designator: FDT3N40TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: SOT-223
 

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FDT3N40TF Datasheet (PDF)

 ..1. Size:812K  fairchild semi
 fdt3n40tf.pdf pdf_icon

FDT3N40TF

April 2013FDT3N40N-Channel UniFETTM MOSFET400 V, 2.0 A, 3.4 Features Description RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 3.7 pF)pr

 7.1. Size:261K  fairchild semi
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FDT3N40TF

November 2009TMUniFETFDT3N40400V N-Channel MOSFETFeatures Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC)stripe, DMOS technology. Low Crss ( typical 3.7 pF)This advanced technology has been especially tailored to

Datasheet: FDS7760A , FDS7764S , FDS7779Z , FDS7788 , FDS8670 , FDS8812NZ , FDS8874 , FDS9412A , AON7408 , FDT461N , FDT55AN06LA0 , FDU044AN03L , FDU068AN03L , FDU2572 , FDU3580 , FDU3706 , FDU6030BL .

History: RU1H190S

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