All MOSFET. FDT55AN06LA0 Datasheet

 

FDT55AN06LA0 Datasheet and Replacement


   Type Designator: FDT55AN06LA0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 8.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SOT-223
 

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FDT55AN06LA0 Datasheet (PDF)

 ..1. Size:451K  fairchild semi
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FDT55AN06LA0

February 2008FDT55AN06LA0tmN-Channel PowerTrench MOSFET 60V, 11A, 55mFeatures Applications RDS(on) = 44m ( Typ.)@ VGS = 5V, ID = 11A Motor / Body load control Qg(tot) = 7.6nC( Typ.),@ VGS = 5V. Power train management Low Miller Charge DC-AC converters Low QRR Body Diode Distributed power architectures and VRMs UIS Capability RoHS

Datasheet: FDS7779Z , FDS7788 , FDS8670 , FDS8812NZ , FDS8874 , FDS9412A , FDT3N40TF , FDT461N , K3569 , FDU044AN03L , FDU068AN03L , FDU2572 , FDU3580 , FDU3706 , FDU6030BL , FDU6296 , FDU6512A .

History: 2SK1446 | PHD82NQ03LT | BUK9624-55A | SVF2N60CNF

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