FDT55AN06LA0 Specs and Replacement

Type Designator: FDT55AN06LA0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: SOT-223

FDT55AN06LA0 substitution

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FDT55AN06LA0 datasheet

 ..1. Size:451K  fairchild semi
 fdt55an06la0.pdf pdf_icon

FDT55AN06LA0

February 2008 FDT55AN06LA0 tm N-Channel PowerTrench MOSFET 60V, 11A, 55m Features Applications RDS(on) = 44m ( Typ.)@ VGS = 5V, ID = 11A Motor / Body load control Qg(tot) = 7.6nC( Typ.),@ VGS = 5V. Power train management Low Miller Charge DC-AC converters Low QRR Body Diode Distributed power architectures and VRMs UIS Capability RoHS... See More ⇒

Detailed specifications: FDS7779Z, FDS7788, FDS8670, FDS8812NZ, FDS8874, FDS9412A, FDT3N40TF, FDT461N, IRF9540, FDU044AN03L, FDU068AN03L, FDU2572, FDU3580, FDU3706, FDU6030BL, FDU6296, FDU6512A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.