All MOSFET. FDU3580 Datasheet

 

FDU3580 Datasheet and Replacement


   Type Designator: FDU3580
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO-251AA
 

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FDU3580 Datasheet (PDF)

 ..1. Size:119K  fairchild semi
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FDU3580

August 2001FDD3580/FDU358080V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 7.7 A, 80 V. RDS(ON) = 29 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 33 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (34nC

Datasheet: FDS8874 , FDS9412A , FDT3N40TF , FDT461N , FDT55AN06LA0 , FDU044AN03L , FDU068AN03L , FDU2572 , K3569 , FDU3706 , FDU6030BL , FDU6296 , FDU6512A , FDU6612A , FDU6676AS , FDU6680 , FDU6688 .

History: VBM165R04

Keywords - FDU3580 MOSFET datasheet

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