FDU3580 Specs and Replacement

Type Designator: FDU3580

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 144 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: TO-251AA

FDU3580 substitution

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FDU3580 datasheet

 ..1. Size:119K  fairchild semi
 fdu3580.pdf pdf_icon

FDU3580

August 2001 FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 7.7 A, 80 V. RDS(ON) = 29 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 33 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (34nC ... See More ⇒

Detailed specifications: FDS8874, FDS9412A, FDT3N40TF, FDT461N, FDT55AN06LA0, FDU044AN03L, FDU068AN03L, FDU2572, 2N7002, FDU3706, FDU6030BL, FDU6296, FDU6512A, FDU6612A, FDU6676AS, FDU6680, FDU6688

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