FDU3706 Datasheet and Replacement
Type Designator: FDU3706
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-251AA
FDU3706 substitution
FDU3706 Datasheet (PDF)
fdd3706 fdu3706.pdf

April 2002 FDD3706/FDU3706 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 50 A, 20 V RDS(ON) = 9 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 11 m @ VGS = 4.5 V converters using either synchronous or conventional RDS(ON) = 16 m @ VGS = 2.5 V switching PWM controlle
fdu3706.pdf

April 2002 FDD3706/FDU3706 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 50 A, 20 V RDS(ON) = 9 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 11 m @ VGS = 4.5 V converters using either synchronous or conventional RDS(ON) = 16 m @ VGS = 2.5 V switching PWM controlle
Datasheet: FDS9412A , FDT3N40TF , FDT461N , FDT55AN06LA0 , FDU044AN03L , FDU068AN03L , FDU2572 , FDU3580 , IRF1010E , FDU6030BL , FDU6296 , FDU6512A , FDU6612A , FDU6676AS , FDU6680 , FDU6688 , FDU6N50F .
History: BSG0813NDI | CS9N90F | CTD03N4P6 | MMBFJ108 | HSSC3134 | IXTR40P50P | AP65SL190DWL
Keywords - FDU3706 MOSFET datasheet
FDU3706 cross reference
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History: BSG0813NDI | CS9N90F | CTD03N4P6 | MMBFJ108 | HSSC3134 | IXTR40P50P | AP65SL190DWL



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