All MOSFET. FDU8586 Datasheet

 

FDU8586 Datasheet and Replacement


   Type Designator: FDU8586
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-251AA
 

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FDU8586 Datasheet (PDF)

 ..1. Size:388K  fairchild semi
 fdd8586 fdu8586.pdf pdf_icon

FDU8586

January 2007FDD8586/FDU8586tmN-Channel PowerTrench MOSFET 20V, 35A, 5.5mFeatures General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It h

 8.1. Size:333K  fairchild semi
 fdd8580 fdu8580.pdf pdf_icon

FDU8586

July 2006FDD8580/FDU8580tmN-Channel PowerTrench MOSFET 20V, 35A, 9mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35Ato improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has been opti

Datasheet: FDU6612A , FDU6676AS , FDU6680 , FDU6688 , FDU6N50F , FDU6N50TU , FDU7030BL , FDU8580 , 4N60 , FDU8770 , FDU8770F071 , FDU8778 , FDU8780 , FDU8780F071 , FDU8782 , FDU8796 , FDU8796F071 .

History: VBZE10N20 | RJK03M3DPA

Keywords - FDU8586 MOSFET datasheet

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