FDU8586 Specs and Replacement

Type Designator: FDU8586

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO-251AA

FDU8586 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDU8586 datasheet

 ..1. Size:388K  fairchild semi
 fdd8586 fdu8586.pdf pdf_icon

FDU8586

January 2007 FDD8586/FDU8586 tm N-Channel PowerTrench MOSFET 20V, 35A, 5.5m Features General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It h... See More ⇒

 8.1. Size:333K  fairchild semi
 fdd8580 fdu8580.pdf pdf_icon

FDU8586

July 2006 FDD8580/FDU8580 tm N-Channel PowerTrench MOSFET 20V, 35A, 9m Features General Description This N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35A to improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has been opti... See More ⇒

Detailed specifications: FDU6612A, FDU6676AS, FDU6680, FDU6688, FDU6N50F, FDU6N50TU, FDU7030BL, FDU8580, 12N60, FDU8770, FDU8770F071, FDU8778, FDU8780, FDU8780F071, FDU8782, FDU8796, FDU8796F071

Keywords - FDU8586 MOSFET specs

 FDU8586 cross reference

 FDU8586 equivalent finder

 FDU8586 pdf lookup

 FDU8586 substitution

 FDU8586 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs