FDW6923 Datasheet and Replacement
Type Designator: FDW6923
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TSSOP-8
FDW6923 substitution
FDW6923 Datasheet (PDF)
fdw6923.pdf
July 2008 FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged 3.5 A, 20 V. RDS(ON) = 0.045 @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 0.075 @ VGS = 2.5 V PowerTrench process. It is combined with a low fo
Datasheet: FDV304PNB8U003 , FDW252P , FDW254P , FDW254PZ , FDW256P , FDW258P , FDW262P , FDW264P , 8N60 , FDZ201N , FDZ202P , FDZ204P , FDZ206P , FDZ208P , FDZ209N , FDZ291P , FDZ293P .
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